APTCV60HM45BC20T3G
Module; SiC diode/transistor; 600V; 38A; SP3F; Press-in PCB; 250W
Ražotājs: MICROCHIP TECHNOLOGY
Oriģināls simbols:
APTCV60HM45BC20T3G
TME Simbols:
APTCV60HM45BC20T3G
Specifikācija
Manufacturer | MICROCHIP TECHNOLOGY | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | SiC diode/transistor | |
Drain-source voltage | 600V | |
Drain current | 38A | |
Case | SP3F | |
Topology | boost chopper, H-bridge, NTC thermistor | |
Electrical mounting | Press-in PCB | |
On-state resistance | 45mΩ | |
Pulsed drain current | 130A | |
Power dissipation | 250W | |
Technology | CoolMOS™, Field Stop, SiC, Trench | |
Gate-source voltage | ±20V | |
Mechanical mounting | screw |
Masa bruto110 g
Sertifikācija
Transfer Multisort Elektronik Sp. z o.o. ir minētās prečzīmes importētājs
Skatiet citus produktus šajā kategorijā: Transistor modules MICROCHIP TECHNOLOGY,
* APTCV60HM45BC20T3G
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