APTCV60TLM45T3G
Module; diode/transistor; 600V; 38A; SP3F; Press-in PCB; Idm: 130A
Ražotājs: MICROCHIP TECHNOLOGY
Oriģināls simbols:
APTCV60TLM45T3G
TME Simbols:
APTCV60TLM45T3G
Specifikācija
Manufacturer | MICROCHIP TECHNOLOGY | |
Type of semiconductor module | MOSFET / IGBT transistor | |
Semiconductor structure | diode/transistor | |
Drain-source voltage | 600V | |
Drain current | 38A | |
Case | SP3F | |
Topology | NTC thermistor, three-level inverter; single-phase | |
Electrical mounting | Press-in PCB | |
On-state resistance | 45mΩ | |
Pulsed drain current | 130A | |
Power dissipation | 250W | |
Technology | Field Stop, SJ-MOSFET, Trench | |
Gate-source voltage | ±20V | |
Mechanical mounting | screw | |
Collector current | 75A |
Masa bruto110 g
Sertifikācija
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Skatiet citus produktus šajā kategorijā: Transistor modules MICROCHIP TECHNOLOGY,
* APTCV60TLM45T3G
0 TME noliktavā
Gabalu skaits (Daudzkārtīgums: 11)
Neto cena par daudzumiem no 11 gab - 93.74 USDBruto cena par daudzumiem no 11 gab - 113.43 USD