JAUNUMS
B2M030120N
Module; single transistor; 1.2kV; 47A; SOT227B; screw; Idm: 151A
Ražotājs: BASiC SEMICONDUCTOR
Oriģināls simbols:
B2M030120N
TME Simbols:
B2M030120N
Specifikācija
Manufacturer | BASiC SEMICONDUCTOR | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 1,2kV | |
Drain current | 47A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 50mΩ | |
Pulsed drain current | 151A | |
Power dissipation | 223W | |
Technology | SiC | |
Kind of channel | enhancement | |
Gate-source voltage | -4...18V | |
Mechanical mounting | screw |
Features of semiconductor devices
- integrated anti-parallel diode
- Kelvin terminal
Masa bruto1 g
Sertifikācija
Transfer Multisort Elektronik Sp. z o.o. ir minētās prečzīmes importētājs
Skatiet citus produktus šajā kategorijā: Tranzistoru moduļi MOSFET BASiC SEMICONDUCTOR,
* B2M030120NGabalu skaits (Daudzkārtīgums: 150)
0 TME noliktavā
Neto cena par daudzumiem no 150 gab - 10.91 USDBruto cena par daudzumiem no 150 gab - 13.20 USD