G3R20MT17N
Module; single transistor; 1.7kV; 70A; SOT227B; screw; Idm: 300A
Ražotājs: GeneSiC SEMICONDUCTOR
Oriģināls simbols:
G3R20MT17N
TME Simbols:
G3R20MT17N
Specifikācija
Manufacturer | GeneSiC SEMICONDUCTOR | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 1,7kV | |
Drain current | 70A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 20mΩ | |
Pulsed drain current | 300A | |
Power dissipation | 523W | |
Technology | G3R™, SiC | |
Kind of channel | enhancement | |
Gate-source voltage | -5...15V | |
Mechanical mounting | screw |
Masa bruto35.44 g
Sertifikācija
Skatiet citus produktus šajā kategorijā: Transistor modules GeneSiC SEMICONDUCTOR
* G3R20MT17N
Ražotāja iepakojuma metode:Tūba = 10 gab