IXFN100N65X2
Module; single transistor; 650V; 78A; SOT227B; screw; Idm: 200A
Ražotājs: IXYS
Oriģināls simbols:
IXFN100N65X2
TME Simbols:
IXFN100N65X2
Specifikācija
Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 650V | |
Drain current | 78A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 30mΩ | |
Pulsed drain current | 200A | |
Power dissipation | 595W | |
Technology | HiPerFET™, X2-Class | |
Kind of channel | enhancement | |
Gate charge | 183nC | |
Reverse recovery time | 200ns | |
Gate-source voltage | ±40V | |
Mechanical mounting | screw |
Masa bruto37.09 g
Sertifikācija
Skatiet citus produktus šajā kategorijā: Transistor modules IXYS,
* IXFN100N65X2Gabalu skaits (Daudzkārtīgums: 1)
0 TME noliktavā
Neto cena par daudzumiem no 1 gab - 29.22 EURBruto cena par daudzumiem no 1 gab - 35.36 EUR
Neto cena par daudzumiem no 10 gab - 23.32 EURBruto cena par daudzumiem no 10 gab - 28.21 EUR