IXFN110N60P3
Module; single transistor; 600V; 90A; SOT227B; screw; Idm: 275A
Ražotājs: IXYS
Oriģināls simbols:
IXFN110N60P3
TME Simbols:
IXFN110N60P3
Specifikācija
Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 600V | |
Drain current | 90A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 56mΩ | |
Pulsed drain current | 275A | |
Power dissipation | 1,5kW | |
Technology | HiPerFET™, Polar3™ | |
Kind of channel | enhancement | |
Gate charge | 254nC | |
Reverse recovery time | 250ns | |
Gate-source voltage | ±40V | |
Mechanical mounting | screw |
Masa bruto35.71 g
Sertifikācija
Skatiet citus produktus šajā kategorijā: Transistor modules IXYS,
* IXFN110N60P3Gabalu skaits (Daudzkārtīgums: 100)
0 TME noliktavā
Neto cena par daudzumiem no 100 gab - 32.23 EURBruto cena par daudzumiem no 100 gab - 38.99 EUR
Ražotāja iepakojuma metodeTūba = 10 gab