IXFN140N25T
Module; single transistor; 250V; 120A; SOT227B; screw; Idm: 400A
Ražotājs: IXYS
Oriģināls simbols:
IXFN140N25T
TME Simbols:
IXFN140N25T
Specifikācija
Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 250V | |
Drain current | 120A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 17mΩ | |
Pulsed drain current | 400A | |
Power dissipation | 690W | |
Technology | GigaMOS™, HiPerFET™ | |
Kind of channel | enhancement | |
Gate charge | 255nC | |
Reverse recovery time | 200ns | |
Gate-source voltage | ±30V | |
Mechanical mounting | screw |
Masa bruto37.12 g
Sertifikācija
Skatiet citus produktus šajā kategorijā: Transistor modules IXYS,
* IXFN140N25TGabalu skaits (Daudzkārtīgums: 300)
0 TME noliktavā
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Ražotāja iepakojuma metodeTūba = 10 gab