IXFN360N15T2
Module; single transistor; 150V; 310A; SOT227B; screw; Idm: 900A
Ražotājs: IXYS
Oriģināls simbols:
IXFN360N15T2
TME Simbols:
IXFN360N15T2
Specifikācija
Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 150V | |
Drain current | 310A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 4mΩ | |
Pulsed drain current | 900A | |
Power dissipation | 1,07kW | |
Technology | GigaMOS™, HiPerFET™, TrenchT2™ | |
Kind of channel | enhancement | |
Gate charge | 715nC | |
Reverse recovery time | 150ns | |
Gate-source voltage | ±30V | |
Mechanical mounting | screw |
Masa bruto37.17 g
Sertifikācija
Skatiet citus produktus šajā kategorijā: Transistor modules IXYS,
* IXFN360N15T2Gabalu skaits (Daudzkārtīgums: 300)
0 TME noliktavā
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