IXFN44N80P
Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Ražotājs: IXYS
Oriģināls simbols:
IXFN44N80P
TME Simbols:
IXFN44N80P
Specifikācija
Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 800V | |
Drain current | 39A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 0,19Ω | |
Pulsed drain current | 100A | |
Power dissipation | 694W | |
Technology | HiPerFET™, Polar™ | |
Kind of channel | enhancement | |
Gate charge | 200nC | |
Reverse recovery time | 250ns | |
Gate-source voltage | ±30V | |
Mechanical mounting | screw |
Masa bruto37.31 g
Sertifikācija
Skatiet citus produktus šajā kategorijā: Transistor modules IXYS,
* IXFN44N80PGabalu skaits (Daudzkārtīgums: 300)
0 TME noliktavā
Neto cena par daudzumiem no 300 gab - 22.16 EURBruto cena par daudzumiem no 300 gab - 26.81 EUR
Ražotāja iepakojuma metodeTūba = 10 gab