IXFN55N50
Module; single transistor; 500V; 55A; SOT227B; screw; Idm: 220A
Ražotājs: IXYS
Oriģināls simbols:
IXFN55N50
TME Simbols:
IXFN55N50
Specifikācija
Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 500V | |
Drain current | 55A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 80mΩ | |
Pulsed drain current | 220A | |
Power dissipation | 625W | |
Technology | HiPerFET™ | |
Kind of channel | enhancement | |
Gate charge | 330nC | |
Reverse recovery time | 250ns | |
Gate-source voltage | ±40V | |
Mechanical mounting | screw |
Masa bruto36.7 g
Sertifikācija
Skatiet citus produktus šajā kategorijā: Transistor modules IXYS,
* IXFN55N50Gabalu skaits (Daudzkārtīgums: 300)
0 TME noliktavā
Neto cena par daudzumiem no 300 gab - 29.51 EURBruto cena par daudzumiem no 300 gab - 35.70 EUR