IXFN80N50P
Module; single transistor; 500V; 66A; SOT227B; screw; Idm: 200A
Ražotājs: IXYS
Oriģināls simbols:
IXFN80N50P
TME Simbols:
IXFN80N50P
Specifikācija
Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 500V | |
Drain current | 66A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 65mΩ | |
Pulsed drain current | 200A | |
Power dissipation | 700W | |
Technology | HiPerFET™, PolarHV™ | |
Kind of channel | enhancement | |
Gate charge | 195nC | |
Reverse recovery time | 200ns | |
Gate-source voltage | ±30V | |
Mechanical mounting | screw |
Masa bruto30 g
Sertifikācija
Skatiet citus produktus šajā kategorijā: Transistor modules IXYS,
* IXFN80N50PGabalu skaits (Daudzkārtīgums: 300)
0 TME noliktavā
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Ražotāja iepakojuma metodeTūba = 10 gab