IXTN120P20T
Module; single transistor; -200V; -106A; SOT227B; screw; Idm: -400A
Ražotājs: IXYS
Oriģināls simbols:
IXTN120P20T
TME Simbols:
IXTN120P20T
Specifikācija
Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | -200V | |
Drain current | -106A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 30mΩ | |
Pulsed drain current | -400A | |
Power dissipation | 830W | |
Technology | TrenchP™ | |
Kind of channel | enhancement | |
Gate charge | 740nC | |
Reverse recovery time | 300ns | |
Gate-source voltage | ±15V | |
Mechanical mounting | screw |
Masa bruto29.575 g
Sertifikācija
Skatiet citus produktus šajā kategorijā: Transistor modules IXYS,
* IXTN120P20TGabalu skaits (Daudzkārtīgums: 1)
0 TME noliktavā
Neto cena par daudzumiem no 1 gab - 66.21 USDBruto cena par daudzumiem no 1 gab - 80.12 USD
Neto cena par daudzumiem no 3 gab - 58.47 USDBruto cena par daudzumiem no 3 gab - 70.75 USD
Neto cena par daudzumiem no 10 gab - 52.58 USDBruto cena par daudzumiem no 10 gab - 63.62 USD