IXTN170P10P
Module; single transistor; -100V; -170A; SOT227B; screw; Idm: -510A
Ražotājs: IXYS
Oriģināls simbols:
IXTN170P10P
TME Simbols:
IXTN170P10P
Specifikācija
Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | -100V | |
Drain current | -170A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 14mΩ | |
Pulsed drain current | -510A | |
Power dissipation | 890W | |
Technology | PolarP™ | |
Kind of channel | enhancement | |
Gate charge | 240nC | |
Reverse recovery time | 176ns | |
Gate-source voltage | ±30V | |
Mechanical mounting | screw |
Masa bruto30 g
Sertifikācija
Skatiet citus produktus šajā kategorijā: Transistor modules IXYS,
* IXTN170P10PGabalu skaits (Daudzkārtīgums: 300)
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