IXTN210P10T
Module; single transistor; -100V; -210A; SOT227B; screw; Idm: -800A
Ražotājs: IXYS
Oriģināls simbols:
IXTN210P10T
TME Simbols:
IXTN210P10T
Specifikācija
Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | -100V | |
Drain current | -210A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 7,5mΩ | |
Pulsed drain current | -800A | |
Power dissipation | 830W | |
Technology | TrenchP™ | |
Kind of channel | enhancement | |
Gate charge | 740nC | |
Reverse recovery time | 200ns | |
Gate-source voltage | ±15V | |
Mechanical mounting | screw |
Masa bruto37.13 g
Skatiet citus produktus šajā kategorijā: Transistor modules IXYS,
* IXTN210P10TGabalu skaits (Daudzkārtīgums: 1)
0 TME noliktavā
Neto cena par daudzumiem no 1 gab - 41.81 EURBruto cena par daudzumiem no 1 gab - 50.58 EUR
Neto cena par daudzumiem no 10 gab - 39.18 EURBruto cena par daudzumiem no 10 gab - 47.40 EUR
Ražotāja iepakojuma metodeTūba = 10 gab