IXTN8N150L
Module; single transistor; 1.5kV; 7.5A; SOT227B; screw; Idm: 20A
Ražotājs: IXYS
Oriģināls simbols:
IXTN8N150L
TME Simbols:
IXTN8N150L
Specifikācija
Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 1,5kV | |
Drain current | 7,5A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 3,6Ω | |
Pulsed drain current | 20A | |
Power dissipation | 545W | |
Technology | Linear™ | |
Kind of channel | enhancement | |
Gate charge | 250nC | |
Reverse recovery time | 1,7µs | |
Gate-source voltage | ±40V | |
Mechanical mounting | screw |
Masa bruto30 g
Sertifikācija
Skatiet citus produktus šajā kategorijā: Transistor modules IXYS,
* IXTN8N150LGabalu skaits (Daudzkārtīgums: 300)
0 TME noliktavā
Produkts pēc speciālā pasūtījuma