IXTN90P20P
Module; single transistor; -200V; -90A; SOT227B; screw; Idm: -270A
Ražotājs: IXYS
Oriģināls simbols:
IXTN90P20P
TME Simbols:
IXTN90P20P
Specifikācija
Manufacturer | IXYS | ||
Type of semiconductor module | MOSFET transistor | ||
Semiconductor structure | single transistor | ||
Drain-source voltage | -200V | ||
Drain current | -90A | ||
Case | SOT227B | ||
Electrical mounting | screw | ||
Polarisation | unipolar | ||
On-state resistance | 44mΩ | ||
Pulsed drain current | -270A | ||
Power dissipation | 890W | ||
Technology | PolarP™ | ||
Kind of channel | enhancement | ||
Gate charge | 205nC | ||
Reverse recovery time | 315ns | ||
Gate-source voltage | ±30V | ||
Mechanical mounting | screw |
Masa bruto30 g
Sertifikācija
Skatiet citus produktus šajā kategorijā: Transistor modules IXYS,
* IXTN90P20PGabalu skaits (Daudzkārtīgums: 300)
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