STGAP2SICSANCTR
IC: driver; SiC MOSFET gate driver; SO8; -4÷4A; 1.7kV; Ch: 1
Ražotājs: STMicroelectronics
Oriģināls simbols:
STGAP2SICSANCTR
TME Simbols:
STGAP2SICSANCTR
Specifikācija
Manufacturer | STMicroelectronics | |
Type of integrated circuit | driver | |
Kind of integrated circuit | SiC MOSFET gate driver | |
Case | SO8 | |
Output current | -4...4A | |
Output voltage | 1,7kV | |
Number of channels | 1 | |
Integrated circuit features | galvanically isolated | |
Mounting | SMD | |
Operating temperature | -40...125°C | |
Kind of package | reel, tape |
Supply voltage
- 3,1...5,25V
Masa bruto1 g
Sertifikācija
Skatiet citus produktus šajā kategorijā: MOSFET/IGBT draiveri STMicroelectronics,
* STGAP2SICSANCTRGabalu skaits (Daudzkārtīgums: 2 500)
0 TME noliktavā
Neto cena par daudzumiem no 2500 gab - 1.02 USDBruto cena par daudzumiem no 2500 gab - 1.23 USD