STGAP2SICSCTR
IC: driver; SiC MOSFET gate driver; SO8-W; -4÷4A; 1.2kV; Ch: 1
Ražotājs: STMicroelectronics
Oriģināls simbols:
STGAP2SICSCTR
TME Simbols:
STGAP2SICSCTR
Specifikācija
Manufacturer | STMicroelectronics | |
Type of integrated circuit | driver | |
Kind of integrated circuit | SiC MOSFET gate driver | |
Case | SO8-W | |
Output current | -4...4A | |
Output voltage | 1,2kV | |
Number of channels | 1 | |
Integrated circuit features | galvanically isolated | |
Mounting | SMD | |
Operating temperature | -40...125°C | |
Kind of package | reel, tape |
Supply voltage
- 3,1...5,5V
Masa bruto1 g
Sertifikācija
Skatiet citus produktus šajā kategorijā: MOSFET/IGBT draiveri STMicroelectronics,
* STGAP2SICSCTRGabalu skaits (Daudzkārtīgums: 1 000)
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