WMSC010H12B1P6T
Module; transistor/transistor; 1.2kV; 107A; Press-in PCB; 152W
Ražotājs: WeEn Semiconductors
Oriģināls simbols:
WMSC010H12B1P6T
TME Simbols:
WMSC010H12B1P6T
Specifikācija
Manufacturer | WeEn Semiconductors | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | transistor/transistor | |
Drain-source voltage | 1,2kV | |
Drain current | 107A | |
Topology | MOSFET half-bridge, NTC thermistor | |
Electrical mounting | Press-in PCB | |
On-state resistance | 10mΩ | |
Pulsed drain current | 210A | |
Power dissipation | 152W | |
Technology | SiC | |
Gate-source voltage | -4...18V | |
Mechanical mounting | screw |
Masa bruto20 g
Sertifikācija
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