A1P35S12M3
Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 35A
Tootja: STMicroelectronics
Tootja tähistus:
A1P35S12M3
TME Sümbol:
A1P35S12M3
Spetsifikatsioon
Manufacturer | STMicroelectronics | |
Type of semiconductor module | IGBT | |
Semiconductor structure | transistor/transistor | |
Topology | IGBT half-bridge x3, NTC thermistor | |
Max. off-state voltage | 1,2kV | |
Collector current | 35A | |
Case | ACEPACK™1 | |
Application | Inverter, motors | |
Electrical mounting | Press-in PCB | |
Gate-emitter voltage | ±20V | |
Pulsed collector current | 70A | |
Power dissipation | 250W | |
Mechanical mounting | screw |
Brutomass24.84 g
Sertifikaadid
Vaata selle kategooria ülejäänud tooteid: Moodulid IGBT STMicroelectronics,
* A1P35S12M3Tükkide arv (Mitmekordsus: 1)
12 TME laos
Netohind koguste puhul alates 1 tk - 50.75 USDKoguste brutohind alates 1 tk - 62.92 USD
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