AB2M040120Z
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 51A; Idm: 128A; 348W
Tootja: BASiC SEMICONDUCTOR
Tootja tähistus:
AB2M040120Z
TME Sümbol:
AB2M040120Z
Spetsifikatsioon
Manufacturer | BASiC SEMICONDUCTOR | |
Type of transistor | N-MOSFET | |
Technology | SiC | |
Polarisation | unipolar | |
Drain-source voltage | 1,2kV | |
Drain current | 51A | |
Pulsed drain current | 128A | |
Power dissipation | 348W | |
Case | TO247-4 | |
Gate-source voltage | -4...18V | |
On-state resistance | 40mΩ | |
Mounting | THT | |
Gate charge | 90nC | |
Kind of package | tube | |
Kind of channel | enhancement | |
Features of semiconductor devices | Kelvin terminal | |
Application | automotive industry |
Brutomass1 g
Sertifikaadid
Transfer Multisort Elektronik Sp. z o.o. on antud kaubamärgi maaletooja
Vaata selle kategooria ülejäänud tooteid: N-kanaliga transistorid THT BASiC SEMICONDUCTOR,
* AB2M040120ZTükkide arv (Mitmekordsus: 300)
0 TME laos
Netohind koguste puhul alates 300 tk - 3.79 USDKoguste brutohind alates 300 tk - 4.69 USD