AB2M080120H
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 28A; Idm: 68A; 187W
Tootja: BASiC SEMICONDUCTOR
Tootja tähistus:
AB2M080120H
TME Sümbol:
AB2M080120H
Spetsifikatsioon
Manufacturer | BASiC SEMICONDUCTOR | |
Type of transistor | N-MOSFET | |
Technology | SiC | |
Polarisation | unipolar | |
Drain-source voltage | 1,2kV | |
Drain current | 28A | |
Pulsed drain current | 68A | |
Power dissipation | 187W | |
Case | TO247-3 | |
Gate-source voltage | -4...18V | |
On-state resistance | 80mΩ | |
Mounting | THT | |
Gate charge | 46nC | |
Kind of package | tube | |
Kind of channel | enhancement | |
Application | automotive industry |
Brutomass1 g
Sertifikaadid
Transfer Multisort Elektronik Sp. z o.o. on antud kaubamärgi maaletooja
Vaata selle kategooria ülejäänud tooteid: N-kanaliga transistorid THT BASiC SEMICONDUCTOR,
* AB2M080120HTükkide arv (Mitmekordsus: 1)
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Netohind koguste puhul alates 1 tk - 3.55 USDKoguste brutohind alates 1 tk - 4.41 USD
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