B2M035120YP
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W
Tootja: BASiC SEMICONDUCTOR
Tootja tähistus:
B2M035120YP
TME Sümbol:
B2M035120YP
Spetsifikatsioon
Manufacturer | BASiC SEMICONDUCTOR | |
Type of transistor | N-MOSFET | |
Technology | SiC | |
Polarisation | unipolar | |
Drain-source voltage | 1,2kV | |
Drain current | 60A | |
Pulsed drain current | 190A | |
Power dissipation | 375W | |
Case | TO247PLUS-4 | |
Gate-source voltage | -4...18V | |
On-state resistance | 35mΩ | |
Mounting | THT | |
Gate charge | 115nC | |
Kind of package | tube | |
Kind of channel | enhancement | |
Features of semiconductor devices | Kelvin terminal |
Brutomass7.215 g
Sertifikaadid
Transfer Multisort Elektronik Sp. z o.o. on antud kaubamärgi maaletooja
Vaata selle kategooria ülejäänud tooteid: N-kanaliga transistorid THT BASiC SEMICONDUCTOR,
* B2M035120YPTükkide arv (Mitmekordsus: 1)
0 TME laos
Netohind koguste puhul alates 1 tk - 15.18 EURKoguste brutohind alates 1 tk - 18.82 EUR
Netohind koguste puhul alates 3 tk - 13.71 EURKoguste brutohind alates 3 tk - 17.00 EUR
Netohind koguste puhul alates 10 tk - 12.07 EURKoguste brutohind alates 10 tk - 14.97 EUR
Netohind koguste puhul alates 30 tk - 10.87 EURKoguste brutohind alates 30 tk - 13.47 EUR
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