B2M040120H
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 123A; 333W
Tootja: BASiC SEMICONDUCTOR
Tootja tähistus:
B2M040120H
TME Sümbol:
B2M040120H
Spetsifikatsioon
Manufacturer | BASiC SEMICONDUCTOR | |
Type of transistor | N-MOSFET | |
Technology | SiC | |
Polarisation | unipolar | |
Drain-source voltage | 1,2kV | |
Drain current | 48A | |
Pulsed drain current | 123A | |
Power dissipation | 333W | |
Case | TO247-3 | |
Gate-source voltage | -4...18V | |
On-state resistance | 40mΩ | |
Mounting | THT | |
Gate charge | 90nC | |
Kind of package | tube | |
Kind of channel | enhancement |
Brutomass1 g
Sertifikaadid
Transfer Multisort Elektronik Sp. z o.o. on antud kaubamärgi maaletooja
Vaata selle kategooria ülejäänud tooteid: N-kanaliga transistorid THT BASiC SEMICONDUCTOR,
* B2M040120H
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