B2M080120Z
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 28A; Idm: 68A; 187W
Tootja: BASiC SEMICONDUCTOR
Tootja tähistus:
B2M080120Z
TME Sümbol:
B2M080120Z
Spetsifikatsioon
Manufacturer | BASiC SEMICONDUCTOR | |
Type of transistor | N-MOSFET | |
Technology | SiC | |
Polarisation | unipolar | |
Drain-source voltage | 1,2kV | |
Drain current | 28A | |
Pulsed drain current | 68A | |
Power dissipation | 187W | |
Case | TO247-4 | |
Gate-source voltage | -4...18V | |
On-state resistance | 80mΩ | |
Mounting | THT | |
Gate charge | 46nC | |
Kind of package | tube | |
Kind of channel | enhancement | |
Features of semiconductor devices | Kelvin terminal |
Brutomass1 g
Sertifikaadid
Transfer Multisort Elektronik Sp. z o.o. on antud kaubamärgi maaletooja
Vaata selle kategooria ülejäänud tooteid: N-kanaliga transistorid THT BASiC SEMICONDUCTOR,
* B2M080120ZTükkide arv (Mitmekordsus: 1)
0 TME laos
Netohind koguste puhul alates 1 tk - 1.98 EURKoguste brutohind alates 1 tk - 2.45 EUR
Netohind koguste puhul alates 10 tk - 1.78 EURKoguste brutohind alates 10 tk - 2.21 EUR
Netohind koguste puhul alates 30 tk - 1.57 EURKoguste brutohind alates 30 tk - 1.95 EUR
Netohind koguste puhul alates 120 tk - 1.42 EURKoguste brutohind alates 120 tk - 1.76 EUR
Netohind koguste puhul alates 300 tk - 1.32 EURKoguste brutohind alates 300 tk - 1.64 EUR