B2M160120H
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 39A; 123W
Tootja: BASiC SEMICONDUCTOR
Tootja tähistus:
B2M160120H
TME Sümbol:
B2M160120H
Spetsifikatsioon
Manufacturer | BASiC SEMICONDUCTOR | |
Type of transistor | N-MOSFET | |
Technology | SiC | |
Polarisation | unipolar | |
Drain-source voltage | 1,2kV | |
Drain current | 16A | |
Pulsed drain current | 39A | |
Power dissipation | 123W | |
Case | TO247-3 | |
Gate-source voltage | -4...18V | |
On-state resistance | 0,16Ω | |
Mounting | THT | |
Gate charge | 26nC | |
Kind of package | tube | |
Kind of channel | enhancement |
Brutomass1 g
Sertifikaadid
Transfer Multisort Elektronik Sp. z o.o. on antud kaubamärgi maaletooja
Vaata selle kategooria ülejäänud tooteid: N-kanaliga transistorid THT BASiC SEMICONDUCTOR,
* B2M160120HTükkide arv (Mitmekordsus: 1)
0 TME laos
Netohind koguste puhul alates 1 tk - 1.43 EURKoguste brutohind alates 1 tk - 1.77 EUR
Netohind koguste puhul alates 10 tk - 1.28 EURKoguste brutohind alates 10 tk - 1.58 EUR
Netohind koguste puhul alates 30 tk - 1.13 EURKoguste brutohind alates 30 tk - 1.40 EUR
Netohind koguste puhul alates 120 tk - 1.01 EURKoguste brutohind alates 120 tk - 1.26 EUR
Netohind koguste puhul alates 300 tk - 0.95 EURKoguste brutohind alates 300 tk - 1.18 EUR