B2M600170H
Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 10A; 75W
Tootja: BASiC SEMICONDUCTOR
Tootja tähistus:
B2M600170H
TME Sümbol:
B2M600170H
Spetsifikatsioon
Manufacturer | BASiC SEMICONDUCTOR | |
Type of transistor | N-MOSFET | |
Technology | SiC | |
Polarisation | unipolar | |
Drain-source voltage | 1,7kV | |
Drain current | 5A | |
Pulsed drain current | 10A | |
Power dissipation | 75W | |
Case | TO247-3 | |
Gate-source voltage | -4...18V | |
On-state resistance | 0,6Ω | |
Mounting | THT | |
Gate charge | 14nC | |
Kind of package | tube | |
Kind of channel | enhancement |
Brutomass6.2 g
Sertifikaadid
Transfer Multisort Elektronik Sp. z o.o. on antud kaubamärgi maaletooja
Vaata selle kategooria ülejäänud tooteid: N-kanaliga transistorid THT BASiC SEMICONDUCTOR,
* B2M600170HTükkide arv (Mitmekordsus: 1)
0 TME laos
Netohind koguste puhul alates 1 tk - 1.09 EURKoguste brutohind alates 1 tk - 1.36 EUR
Netohind koguste puhul alates 10 tk - 0.98 EURKoguste brutohind alates 10 tk - 1.22 EUR
Netohind koguste puhul alates 30 tk - 0.87 EURKoguste brutohind alates 30 tk - 1.07 EUR
Netohind koguste puhul alates 120 tk - 0.78 EURKoguste brutohind alates 120 tk - 0.97 EUR
Netohind koguste puhul alates 300 tk - 0.73 EURKoguste brutohind alates 300 tk - 0.91 EUR
Tootja pakendamismeetodTuub = 30 tk