B2M600170R
Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 10A; 60W
Tootja: BASiC SEMICONDUCTOR
Tootja tähistus:
B2M600170R
TME Sümbol:
B2M600170R
Spetsifikatsioon
Manufacturer | BASiC SEMICONDUCTOR | |
Type of transistor | N-MOSFET | |
Technology | SiC | |
Polarisation | unipolar | |
Drain-source voltage | 1,7kV | |
Drain current | 4A | |
Pulsed drain current | 10A | |
Power dissipation | 60W | |
Case | TO263-7 | |
Gate-source voltage | -4...18V | |
On-state resistance | 0,6Ω | |
Mounting | SMD | |
Gate charge | 14nC | |
Kind of package | reel, tape | |
Kind of channel | enhancement | |
Features of semiconductor devices | Kelvin terminal |
Brutomass1 g
Sertifikaadid
Transfer Multisort Elektronik Sp. z o.o. on antud kaubamärgi maaletooja
Vaata selle kategooria ülejäänud tooteid: N-kanaliga transistorid SMD BASiC SEMICONDUCTOR,
* B2M600170RTükkide arv (Mitmekordsus: 800)
0 TME laos
Netohind koguste puhul alates 800 tk - 2.00 EURKoguste brutohind alates 800 tk - 2.47 EUR