B3M013C120Z
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 127A; Idm: 360A; 750W
Tootja: BASiC SEMICONDUCTOR
Tootja tähistus:
B3M013C120Z
TME Sümbol:
B3M013C120Z
Spetsifikatsioon
Manufacturer | BASiC SEMICONDUCTOR | |
Type of transistor | N-MOSFET | |
Technology | SiC | |
Polarisation | unipolar | |
Drain-source voltage | 1,2kV | |
Drain current | 127A | |
Pulsed drain current | 360A | |
Power dissipation | 750W | |
Case | TO247-4 | |
Gate-source voltage | -5...18V | |
On-state resistance | 13,5mΩ | |
Mounting | THT | |
Gate charge | 225nC | |
Kind of package | tube | |
Kind of channel | enhancement | |
Features of semiconductor devices | Kelvin terminal |
Brutomass1 g
Sertifikaadid
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Vaata selle kategooria ülejäänud tooteid: N-kanaliga transistorid THT BASiC SEMICONDUCTOR,
* B3M013C120ZTükkide arv (Mitmekordsus: 300)
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Netohind koguste puhul alates 300 tk - 3.63 EURKoguste brutohind alates 300 tk - 4.50 EUR