BGH50N65HS1
Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Tootja: BASiC SEMICONDUCTOR
Tootja tähistus:
BGH50N65HS1
TME Sümbol:
BGH50N65HS1
Spetsifikatsioon
Manufacturer | BASiC SEMICONDUCTOR | |
Type of transistor | IGBT | |
Technology | Field Stop, SiC SBD, Trench | |
Collector-emitter voltage | 650V | |
Collector current | 50A | |
Power dissipation | 357W | |
Case | TO247-3 | |
Gate-emitter voltage | ±20V | |
Pulsed collector current | 200A | |
Mounting | THT | |
Gate charge | 308nC | |
Kind of package | tube | |
Turn-on time | 54ns | |
Turn-off time | 256ns | |
Features of semiconductor devices | integrated anti-parallel diode |
Brutomass6.26 g
Sertifikaadid
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Vaata selle kategooria ülejäänud tooteid: Transistorid IGBT THT BASiC SEMICONDUCTOR,
* BGH50N65HS1Tükkide arv (Mitmekordsus: 1)
34 TME laos
Netohind koguste puhul alates 1 tk - 11.08 USDKoguste brutohind alates 1 tk - 13.74 USD
Netohind koguste puhul alates 5 tk - 9.97 USDKoguste brutohind alates 5 tk - 12.36 USD
Netohind koguste puhul alates 30 tk - 8.80 USDKoguste brutohind alates 30 tk - 10.92 USD
Netohind koguste puhul alates 150 tk - 7.38 USDKoguste brutohind alates 150 tk - 9.15 USD
Netohind koguste puhul alates 600 tk - 7.12 USDKoguste brutohind alates 600 tk - 8.82 USD
Toode on saadaval ainult laovarude ammendumiseni
Tootja pakendamismeetodTuub = 30 tk