BGH75N65HF1
Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Tootja: BASiC SEMICONDUCTOR
Tootja tähistus:
BGH75N65HF1
TME Sümbol:
BGH75N65HF1
Spetsifikatsioon
Manufacturer | BASiC SEMICONDUCTOR | |
Type of transistor | IGBT | |
Technology | Field Stop, SiC SBD, Trench | |
Collector-emitter voltage | 650V | |
Collector current | 75A | |
Power dissipation | 405W | |
Case | TO247-3 | |
Gate-emitter voltage | ±20V | |
Pulsed collector current | 300A | |
Mounting | THT | |
Gate charge | 444nC | |
Kind of package | tube | |
Turn-on time | 104ns | |
Turn-off time | 376ns | |
Features of semiconductor devices | integrated anti-parallel diode |
Brutomass5 g
Sertifikaadid
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Vaata selle kategooria ülejäänud tooteid: Transistorid IGBT THT BASiC SEMICONDUCTOR,
* BGH75N65HF1
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Netohind koguste puhul alates 1 tk - 11.39 USDKoguste brutohind alates 1 tk - 14.13 USD
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