DG30X07T2

Name: STARPOWER SEMICONDUCTOR DG30X07T2
Brand: STARPOWER SEMICONDUCTOR
SKU: DG30X07T2
Availability: InStock

Transistor: IGBT; 650V; 30A; 208W; TO247

Tootja: STARPOWER SEMICONDUCTOR

Tootja tähistus:

DG30X07T2

TME Sümbol:

DG30X07T2

Netohind koguste puhul alates 1 tk - 2.87 USDKoguste brutohind alates 1 tk - 3.56 USD

Netohind koguste puhul alates 3 tk - 2.58 USDKoguste brutohind alates 3 tk - 3.20 USD

Netohind koguste puhul alates 10 tk - 2.28 USDKoguste brutohind alates 10 tk - 2.82 USD

Netohind koguste puhul alates 30 tk - 2.05 USDKoguste brutohind alates 30 tk - 2.55 USD

Tükkide arv (Mitmekordsus: 1)

Minimaalne tellitav kogus: 1.
Mitmekordsus: 1.

Tootja pakendamismeetodTuub = 30 tk

Manufacturer	STARPOWER SEMICONDUCTOR
Type of transistor	IGBT
Collector-emitter voltage	650V
Collector current	30A
Power dissipation	208W
Case	TO247
Gate-emitter voltage	±20V
Pulsed collector current	90A
Mounting	THT
Gate charge	0,22µC
Kind of package	tube
Turn-on time	0,1µs
Turn-off time	306ns
Features of semiconductor devices	integrated anti-parallel diode