IRFBE30LPBF
Transistor: N-MOSFET; unipolar; 800V; 2.6A; Idm: 16A; 125W
Tootja: VISHAY
Tootja tähistus:
IRFBE30LPBF
TME Sümbol:
IRFBE30LPBF
Spetsifikatsioon
Manufacturer | VISHAY | ||
Type of transistor | N-MOSFET | ||
Polarisation | unipolar | ||
Drain-source voltage | 800V | ||
Drain current | 2,6A | ||
Pulsed drain current | 16A | ||
Power dissipation | 125W | ||
Case | I2PAK, TO262 | ||
Gate-source voltage | ±20V | ||
On-state resistance | 3Ω | ||
Mounting | THT | ||
Gate charge | 78nC | ||
Kind of package | tube | ||
Kind of channel | enhancement |
Brutomass2 g
Sertifikaadid
Vaata selle kategooria ülejäänud tooteid: N-kanaliga transistorid THT VISHAY,
* IRFBE30LPBFTükkide arv (Mitmekordsus: 1)
0 TME laos
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