IXFN102N30P
Module; single transistor; 300V; 86A; SOT227B; screw; Idm: 250A
Tootja: IXYS
Tootja tähistus:
IXFN102N30P
TME Sümbol:
IXFN102N30P
Spetsifikatsioon
Manufacturer | IXYS | ||
Type of semiconductor module | MOSFET transistor | ||
Semiconductor structure | single transistor | ||
Drain-source voltage | 300V | ||
Drain current | 86A | ||
Case | SOT227B | ||
Electrical mounting | screw | ||
Polarisation | unipolar | ||
On-state resistance | 33mΩ | ||
Pulsed drain current | 250A | ||
Power dissipation | 570W | ||
Technology | HiPerFET™, Polar™ | ||
Kind of channel | enhancement | ||
Gate charge | 224nC | ||
Reverse recovery time | 200ns | ||
Gate-source voltage | ±30V | ||
Mechanical mounting | screw |
Brutomass36.99 g
Sertifikaadid
Vaata selle kategooria ülejäänud tooteid: Transistor modules IXYS,
* IXFN102N30PTükkide arv (Mitmekordsus: 1)
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Netohind koguste puhul alates 1 tk - 27.31 USDKoguste brutohind alates 1 tk - 33.87 USD
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