IXFN102N30P
Module; single transistor; 300V; 86A; SOT227B; screw; Idm: 250A
Tootja: IXYS
Tootja tähistus:
IXFN102N30P
TME Sümbol:
IXFN102N30P
Spetsifikatsioon
Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 300V | |
Drain current | 86A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 33mΩ | |
Pulsed drain current | 250A | |
Power dissipation | 570W | |
Technology | HiPerFET™, Polar™ | |
Kind of channel | enhancement | |
Gate charge | 224nC | |
Reverse recovery time | 200ns | |
Gate-source voltage | ±30V | |
Mechanical mounting | screw |
Brutomass36.99 g
Sertifikaadid
Vaata selle kategooria ülejäänud tooteid: Transistor modules IXYS,
* IXFN102N30P
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