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Manufacturer | IXYS | ||
Type of semiconductor module | MOSFET transistor | ||
Semiconductor structure | single transistor | ||
Drain-source voltage | 850V | ||
Drain current | 110A | ||
Case | SOT227B | ||
Electrical mounting | screw | ||
Polarisation | unipolar | ||
On-state resistance | 33mΩ | ||
Pulsed drain current | 220A | ||
Power dissipation | 1,17kW | ||
Technology | HiPerFET™, X-Class | ||
Kind of channel | enhancement | ||
Gate charge | 425nC | ||
Reverse recovery time | 205ns | ||
Gate-source voltage | ±40V | ||
Mechanical mounting | screw |