IXFN200N10P
Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 400A
Tootja: IXYS
Tootja tähistus:
IXFN200N10P
TME Sümbol:
IXFN200N10P
Spetsifikatsioon
Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 100V | |
Drain current | 200A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 7,5mΩ | |
Pulsed drain current | 400A | |
Power dissipation | 680W | |
Technology | HiPerFET™, Polar™ | |
Kind of channel | enhancement | |
Gate charge | 235nC | |
Reverse recovery time | 150ns | |
Gate-source voltage | ±30V | |
Mechanical mounting | screw |
Brutomass37.04 g
Sertifikaadid
Vaata selle kategooria ülejäänud tooteid: Transistor modules IXYS,
* IXFN200N10PTükkide arv (Mitmekordsus: 1)
0 TME laos
Netohind koguste puhul alates 1 tk - 26.69 USDKoguste brutohind alates 1 tk - 33.09 USD
Netohind koguste puhul alates 5 tk - 23.72 USDKoguste brutohind alates 5 tk - 29.41 USD
Netohind koguste puhul alates 10 tk - 22.88 USDKoguste brutohind alates 10 tk - 28.37 USD
Tootja pakendamismeetodTuub = 10 tk