IXFN210N20P
Module; single transistor; 200V; 188A; SOT227B; screw; Idm: 600A
Tootja: IXYS
Tootja tähistus:
IXFN210N20P
TME Sümbol:
IXFN210N20P
Spetsifikatsioon
Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 200V | |
Drain current | 188A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 10,5mΩ | |
Pulsed drain current | 600A | |
Power dissipation | 1,07kW | |
Technology | HiPerFET™, Polar™ | |
Kind of channel | enhancement | |
Gate charge | 255nC | |
Reverse recovery time | 200ns | |
Gate-source voltage | ±30V | |
Mechanical mounting | screw |
Brutomass37.01 g
Sertifikaadid
Vaata selle kategooria ülejäänud tooteid: Transistor modules IXYS,
* IXFN210N20P
121 TME laos
Tükkide arv (Mitmekordsus: 1)
Netohind koguste puhul alates 1 tk - 46.44 USDKoguste brutohind alates 1 tk - 57.59 USD
Netohind koguste puhul alates 10 tk - 41.76 USDKoguste brutohind alates 10 tk - 51.78 USD
Netohind koguste puhul alates 20 tk - 39.12 USDKoguste brutohind alates 20 tk - 48.50 USD
Netohind koguste puhul alates 50 tk - 36.89 USDKoguste brutohind alates 50 tk - 45.74 USD
Tootja pakendamismeetod:Tuub = 10 tk