IXFN210N30P3
Module; single transistor; 300V; 192A; SOT227B; screw; Idm: 550A
Tootja: IXYS
Tootja tähistus:
IXFN210N30P3
TME Sümbol:
IXFN210N30P3
Spetsifikatsioon
Manufacturer | IXYS | ||
Type of semiconductor module | MOSFET transistor | ||
Semiconductor structure | single transistor | ||
Drain-source voltage | 300V | ||
Drain current | 192A | ||
Case | SOT227B | ||
Electrical mounting | screw | ||
Polarisation | unipolar | ||
On-state resistance | 14,5mΩ | ||
Pulsed drain current | 550A | ||
Power dissipation | 1,5kW | ||
Technology | HiPerFET™, Polar3™ | ||
Kind of channel | enhancement | ||
Gate charge | 268nC | ||
Reverse recovery time | 250ns | ||
Gate-source voltage | ±30V | ||
Mechanical mounting | screw |
Brutomass37.05 g
Sertifikaadid
Vaata selle kategooria ülejäänud tooteid: Transistor modules IXYS,
* IXFN210N30P3Tükkide arv (Mitmekordsus: 1)
1 TME laos
Netohind koguste puhul alates 1 tk - 32.28 EURKoguste brutohind alates 1 tk - 40.03 EUR
Netohind koguste puhul alates 10 tk - 29.38 EURKoguste brutohind alates 10 tk - 36.42 EUR
Netohind koguste puhul alates 20 tk - 27.69 EURKoguste brutohind alates 20 tk - 34.34 EUR
Netohind koguste puhul alates 200 tk - 26.73 EURKoguste brutohind alates 200 tk - 33.15 EUR
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