IXFN210N30P3

Name: IXYS IXFN210N30P3
Brand: IXYS
SKU: IXFN210N30P3
Availability: InStock

Module; single transistor; 300V; 192A; SOT227B; screw; Idm: 550A

Tootja: IXYS

Tootja tähistus:

IXFN210N30P3

TME Sümbol:

IXFN210N30P3

Netohind koguste puhul alates 1 tk - 37.49 USDKoguste brutohind alates 1 tk - 46.49 USD

Netohind koguste puhul alates 10 tk - 34.11 USDKoguste brutohind alates 10 tk - 42.30 USD

Netohind koguste puhul alates 20 tk - 32.16 USDKoguste brutohind alates 20 tk - 39.88 USD

Netohind koguste puhul alates 200 tk - 31.05 USDKoguste brutohind alates 200 tk - 38.50 USD

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Tootja pakendamismeetodTuub = 10 tk

Manufacturer	IXYS
Type of semiconductor module	MOSFET transistor
Semiconductor structure	single transistor
Drain-source voltage	300V
Drain current	192A
Case	SOT227B
Electrical mounting	screw
Polarisation	unipolar
On-state resistance	14,5mΩ
Pulsed drain current	550A
Power dissipation	1,5kW
Technology	HiPerFET™, Polar3™
Kind of channel	enhancement
Gate charge	268nC
Reverse recovery time	250ns
Gate-source voltage	±30V
Mechanical mounting	screw