IXFN210N30P3
Module; single transistor; 300V; 192A; SOT227B; screw; Idm: 550A
Tootja: IXYS
Tootja tähistus:
IXFN210N30P3
TME Sümbol:
IXFN210N30P3
Spetsifikatsioon
Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 300V | |
Drain current | 192A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 14,5mΩ | |
Pulsed drain current | 550A | |
Power dissipation | 1,5kW | |
Technology | HiPerFET™, Polar3™ | |
Kind of channel | enhancement | |
Gate charge | 268nC | |
Reverse recovery time | 250ns | |
Gate-source voltage | ±30V | |
Mechanical mounting | screw |
Brutomass37.05 g
Sertifikaadid
Vaata selle kategooria ülejäänud tooteid: Transistor modules IXYS,
* IXFN210N30P3Tükkide arv (Mitmekordsus: 1)
1 TME laos
Netohind koguste puhul alates 1 tk - 37.61 USDKoguste brutohind alates 1 tk - 46.63 USD
Netohind koguste puhul alates 10 tk - 34.22 USDKoguste brutohind alates 10 tk - 42.43 USD
Netohind koguste puhul alates 20 tk - 32.26 USDKoguste brutohind alates 20 tk - 40.00 USD
Netohind koguste puhul alates 200 tk - 31.14 USDKoguste brutohind alates 200 tk - 38.62 USD
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