IXFN26N100P
Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W
Tootja: IXYS
Tootja tähistus:
IXFN26N100P
TME Sümbol:
IXFN26N100P
Spetsifikatsioon
Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 1kV | |
Drain current | 23A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 390mΩ | |
Pulsed drain current | 65A | |
Power dissipation | 595W | |
Technology | HiPerFET™, Polar™ | |
Kind of channel | enhancement | |
Gate charge | 197nC | |
Reverse recovery time | 300ns | |
Gate-source voltage | ±40V | |
Mechanical mounting | screw |
Brutomass37.04 g
Sertifikaadid
Vaata selle kategooria ülejäänud tooteid: Transistor modules IXYS,
* IXFN26N100PTükkide arv (Mitmekordsus: 1)
6 TME laos
Netohind koguste puhul alates 1 tk - 36.30 EURKoguste brutohind alates 1 tk - 45.01 EUR
Netohind koguste puhul alates 3 tk - 32.04 EURKoguste brutohind alates 3 tk - 39.74 EUR
Netohind koguste puhul alates 10 tk - 28.81 EURKoguste brutohind alates 10 tk - 35.72 EUR
Toode on saadaval ainult laovarude ammendumiseni
Tootja pakendamismeetodTuub = 10 tk