IXFN26N120P
Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A
Tootja: IXYS
Tootja tähistus:
IXFN26N120P
TME Sümbol:
IXFN26N120P
Spetsifikatsioon
Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 1,2kV | |
Drain current | 23A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 0,5Ω | |
Pulsed drain current | 60A | |
Power dissipation | 695W | |
Technology | HiPerFET™, Polar™ | |
Kind of channel | enhancement | |
Gate charge | 255nC | |
Reverse recovery time | 300ns | |
Gate-source voltage | ±40V | |
Mechanical mounting | screw |
Brutomass37.12 g
Sertifikaadid
Vaata selle kategooria ülejäänud tooteid: Transistor modules IXYS,
* IXFN26N120PTükkide arv (Mitmekordsus: 1)
7 TME laos
Netohind koguste puhul alates 1 tk - 43.27 USDKoguste brutohind alates 1 tk - 53.65 USD
Netohind koguste puhul alates 3 tk - 38.21 USDKoguste brutohind alates 3 tk - 47.37 USD
Netohind koguste puhul alates 10 tk - 34.32 USDKoguste brutohind alates 10 tk - 42.56 USD
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Tootja pakendamismeetodTuub = 10 tk