IXFN300N10P
Module; single transistor; 100V; 295A; SOT227B; screw; Idm: 900A
Tootja: IXYS
Tootja tähistus:
IXFN300N10P
TME Sümbol:
IXFN300N10P
Spetsifikatsioon
Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 100V | |
Drain current | 295A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 5,5mΩ | |
Pulsed drain current | 900A | |
Power dissipation | 1,07kW | |
Technology | HiPerFET™, Polar™ | |
Kind of channel | enhancement | |
Gate charge | 279nC | |
Reverse recovery time | 200ns | |
Gate-source voltage | ±30V | |
Mechanical mounting | screw |
Brutomass37.17 g
Sertifikaadid
Vaata selle kategooria ülejäänud tooteid: Transistor modules IXYS,
* IXFN300N10PTükkide arv (Mitmekordsus: 1)
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Netohind koguste puhul alates 1 tk - 43.73 USDKoguste brutohind alates 1 tk - 54.22 USD
Netohind koguste puhul alates 10 tk - 40.56 USDKoguste brutohind alates 10 tk - 50.30 USD
Tootja pakendamismeetodTuub = 10 tk