IXFN30N120P
Module; single transistor; 1.2kV; 30A; SOT227B; screw; Idm: 75A
Tootja: IXYS
Tootja tähistus:
IXFN30N120P
TME Sümbol:
IXFN30N120P
Spetsifikatsioon
Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 1,2kV | |
Drain current | 30A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 0,35Ω | |
Pulsed drain current | 75A | |
Power dissipation | 890W | |
Technology | HiPerFET™, Polar™ | |
Kind of channel | enhancement | |
Gate charge | 310nC | |
Reverse recovery time | 300ns | |
Gate-source voltage | ±40V | |
Mechanical mounting | screw |
Brutomass36.6 g
Sertifikaadid
Vaata selle kategooria ülejäänud tooteid: Transistor modules IXYS,
* IXFN30N120PTükkide arv (Mitmekordsus: 1)
0 TME laos
Netohind koguste puhul alates 1 tk - 69.91 EURKoguste brutohind alates 1 tk - 86.68 EUR
Netohind koguste puhul alates 3 tk - 61.81 EURKoguste brutohind alates 3 tk - 76.64 EUR
Netohind koguste puhul alates 10 tk - 55.51 EURKoguste brutohind alates 10 tk - 68.83 EUR
Tootja pakendamismeetodTuub = 10 tk