IXFN32N80P
Module; single transistor; 800V; 29A; SOT227B; screw; Idm: 250A
Tootja: IXYS
Tootja tähistus:
IXFN32N80P
TME Sümbol:
IXFN32N80P
Spetsifikatsioon
Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 800V | |
Drain current | 29A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 0,27Ω | |
Pulsed drain current | 250A | |
Power dissipation | 625W | |
Technology | HiPerFET™, PolarHV™ | |
Kind of channel | enhancement | |
Gate charge | 150nC | |
Reverse recovery time | 250ns | |
Gate-source voltage | ±40V | |
Mechanical mounting | screw |
Brutomass36.98 g
Sertifikaadid
Vaata selle kategooria ülejäänud tooteid: Transistor modules IXYS,
* IXFN32N80P
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Tükkide arv (Mitmekordsus: 1)
Netohind koguste puhul alates 1 tk - 29.51 EURKoguste brutohind alates 1 tk - 36.59 EUR
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Netohind koguste puhul alates 10 tk - 23.40 EURKoguste brutohind alates 10 tk - 29.02 EUR
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