IXFN360N15T2
Module; single transistor; 150V; 310A; SOT227B; screw; Idm: 900A
Tootja: IXYS
Tootja tähistus:
IXFN360N15T2
TME Sümbol:
IXFN360N15T2
Spetsifikatsioon
Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 150V | |
Drain current | 310A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 4mΩ | |
Pulsed drain current | 900A | |
Power dissipation | 1,07kW | |
Technology | GigaMOS™, HiPerFET™, TrenchT2™ | |
Kind of channel | enhancement | |
Gate charge | 715nC | |
Reverse recovery time | 150ns | |
Gate-source voltage | ±30V | |
Mechanical mounting | screw |
Brutomass37.17 g
Sertifikaadid
Vaata selle kategooria ülejäänud tooteid: Transistor modules IXYS,
* IXFN360N15T2
0 TME laos
Tükkide arv (Mitmekordsus: 300)
Netohind koguste puhul alates 300 tk - 39.08 EURKoguste brutohind alates 300 tk - 48.46 EUR
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