IXFN36N100
Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W
Tootja: IXYS
Tootja tähistus:
IXFN36N100
TME Sümbol:
IXFN36N100
Spetsifikatsioon
Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 1kV | |
Drain current | 36A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 0,24Ω | |
Pulsed drain current | 144A | |
Power dissipation | 694W | |
Technology | HiPerFET™ | |
Kind of channel | enhancement | |
Gate charge | 380nC | |
Reverse recovery time | 180ns | |
Gate-source voltage | ±30V | |
Mechanical mounting | screw |
Brutomass37.27 g
Sertifikaadid
Vaata selle kategooria ülejäänud tooteid: Transistor modules IXYS,
* IXFN36N100
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