IXFN38N100P
Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 120A
Tootja: IXYS
Tootja tähistus:
IXFN38N100P
TME Sümbol:
IXFN38N100P
Spetsifikatsioon
Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 1kV | |
Drain current | 38A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 0,21Ω | |
Pulsed drain current | 120A | |
Power dissipation | 1kW | |
Technology | HiPerFET™, Polar™ | |
Kind of channel | enhancement | |
Gate charge | 0,35µC | |
Reverse recovery time | 300ns | |
Gate-source voltage | ±40V | |
Mechanical mounting | screw |
Brutomass37.24 g
Sertifikaadid
Vaata selle kategooria ülejäänud tooteid: Transistor modules IXYS,
* IXFN38N100PTükkide arv (Mitmekordsus: 1)
0 TME laos
Netohind koguste puhul alates 1 tk - 39.72 EURKoguste brutohind alates 1 tk - 49.25 EUR
Netohind koguste puhul alates 10 tk - 37.21 EURKoguste brutohind alates 10 tk - 46.14 EUR
Tootja pakendamismeetodTuub = 10 tk