IXFN40N110P
Module; single transistor; 1.1kV; 34A; SOT227B; screw; Idm: 100A
Tootja: IXYS
Tootja tähistus:
IXFN40N110P
TME Sümbol:
IXFN40N110P
Spetsifikatsioon
Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 1,1kV | |
Drain current | 34A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 0,26Ω | |
Pulsed drain current | 100A | |
Power dissipation | 890W | |
Technology | HiPerFET™, Polar™ | |
Kind of channel | enhancement | |
Gate charge | 310nC | |
Reverse recovery time | 300ns | |
Gate-source voltage | ±40V | |
Mechanical mounting | screw |
Brutomass35.8 g
Sertifikaadid
Vaata selle kategooria ülejäänud tooteid: Transistor modules IXYS,
* IXFN40N110PTükkide arv (Mitmekordsus: 1)
1 TME laos
Netohind koguste puhul alates 1 tk - 22.71 EURKoguste brutohind alates 1 tk - 28.17 EUR
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