IXFN56N90P
Module; single transistor; 900V; 56A; SOT227B; screw; Idm: 168A
Tootja: IXYS
Tootja tähistus:
IXFN56N90P
TME Sümbol:
IXFN56N90P
Spetsifikatsioon
Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 900V | |
Drain current | 56A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 0,145Ω | |
Pulsed drain current | 168A | |
Power dissipation | 1kW | |
Technology | HiPerFET™, Polar™ | |
Kind of channel | enhancement | |
Gate charge | 375nC | |
Reverse recovery time | 300ns | |
Gate-source voltage | ±40V | |
Mechanical mounting | screw |
Brutomass37.34 g
Sertifikaadid
Vaata selle kategooria ülejäänud tooteid: Transistor modules IXYS,
* IXFN56N90PTükkide arv (Mitmekordsus: 300)
0 TME laos
Netohind koguste puhul alates 300 tk - 43.41 EURKoguste brutohind alates 300 tk - 53.82 EUR
Tootja pakendamismeetodTuub = 10 tk