STGYA50H120DF2
Transistor: IGBT; 1.2kV; 50A; 535W; MAX247
Tootja: STMicroelectronics
Tootja tähistus:
STGYA50H120DF2
TME Sümbol:
STGYA50H120DF2
Spetsifikatsioon
Manufacturer | STMicroelectronics | |
Type of transistor | IGBT | |
Collector-emitter voltage | 1,2kV | |
Collector current | 50A | |
Power dissipation | 535W | |
Case | MAX247 | |
Gate-emitter voltage | ±20V | |
Pulsed collector current | 200A | |
Mounting | THT | |
Gate charge | 0,21µC | |
Kind of package | tube | |
Features of semiconductor devices | integrated anti-parallel diode |
Brutomass6.89 g
Sertifikaadid
Vaata selle kategooria ülejäänud tooteid: Transistorid IGBT THT STMicroelectronics,
* STGYA50H120DF2Tükkide arv (Mitmekordsus: 1)
0 TME laos
Netohind koguste puhul alates 1 tk - 6.33 EURKoguste brutohind alates 1 tk - 7.84 EUR
Tootja pakendamismeetodTuub = 30 tk