A1P50S65M2
Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 50A
Ražotājs: STMicroelectronics
Oriģināls simbols:
A1P50S65M2
TME Simbols:
A1P50S65M2
Specifikācija
Manufacturer | STMicroelectronics | |
Type of semiconductor module | IGBT | |
Semiconductor structure | transistor/transistor | |
Topology | IGBT half-bridge x3, NTC thermistor | |
Max. off-state voltage | 650V | |
Collector current | 50A | |
Case | ACEPACK™1 | |
Application | Inverter, motors | |
Electrical mounting | Press-in PCB | |
Gate-emitter voltage | ±20V | |
Pulsed collector current | 100A | |
Power dissipation | 208W | |
Mechanical mounting | screw |
Masa bruto50 g
Sertifikācija
Skatiet citus produktus šajā kategorijā: Moduļi IGBT STMicroelectronics,
* A1P50S65M2Gabalu skaits (Daudzkārtīgums: 1)
0 TME noliktavā
Neto cena par daudzumiem no 1 gab - 43.05 EURBruto cena par daudzumiem no 1 gab - 52.09 EUR
Neto cena par daudzumiem no 5 gab - 42.13 EURBruto cena par daudzumiem no 5 gab - 50.97 EUR